True to its reputation as the 'king' of Flash memory, Samsung boasts a range of formidable technologies.

The world's leading brand in Flash memory.

According to a recent report by Nihon Keizai (Japan), Samsung continues to maintain its global leading position in the NAND Flash memory market with 34.8% in 2024. Since 2003, the South Korean giant has consistently held the global leadership position in the data storage sector, meeting the enormous storage demands of the 5G, AI, and Big Data eras.

NAND Flash is a static-based memory technology that can store data even when not connected to a power source, and can be erased and rewritten multiple times. With these advantages, NAND Flash is the core technology in SD memory cards, USB drives, SSDs, and the internal memory of many devices such as smartphones, tablets, handheld gaming consoles, drones, dashcams, video cameras, and even virtual reality glasses…

NAND Flash technology is the foundation behind the success of many of Samsung's memory card and hard drive products.

In 2003, Samsung was recognized as the world's number one brand in Flash memory thanks to its incredible technological breakthroughs in Secure Digital memory cards. The next turning point that solidified this leading position was Samsung's introduction of the world's leading V-NAND (or vertical NAND) flash memory. The revolutionary 3D vertical structure of V-NAND technology enabled the company's memory cards and memory products to achieve superior durability and performance. With a solid technological legacy and a spirit of relentless innovation, Samsung now possesses many advanced hard drive technologies, meeting every need from everyday use to AI processing, 3D graphics, and video.

Samsung's revolutionary 3D vertical V-NAND Flash memory delivers superior performance and durability compared to traditional technology.

The new "trump card" in the AI ​​era.

Breakthrough Flash memory technologies enable Samsung to create a range of powerful internal SSDs, meeting a variety of needs from simple to complex in the AI ​​era.

The Samsung 9100 PRO NVMe SSD is an outstanding example. Its groundbreaking PCIe® 5.0 performance allows this internal drive to achieve ultra-fast sequential read/write speeds of up to 14,800/13,400 MB/s (twice as fast as the 990 PRO), and break-even random read/write speeds of up to 2,200K/2,600K IOPS, enabling extremely fast simultaneous processing of numerous disparate data streams. All of this delivers peak output performance and instantaneous loading times for demanding games, heavy tasks, and even AI applications. With expandable capacity up to 8TB, users can comfortably store data during video editing, 3D projects, and even long livestreaming sessions.

The Samsung 9100 PRO NVMe SSD boasts ultra-fast speeds with groundbreaking PCIe® 5.0 performance.

To further enhance optimal performance, the Samsung 9100 PRO NVMe SSD features a cutting-edge 5nm controller power architecture that increases power efficiency by up to 49% compared to the 990 PRO. Superior temperature control ensures uninterrupted user workflow, enabling the running of demanding applications at maximum PCIe® 5.0 performance.

Another outstanding internal hard drive product is the Samsung 990 EVO Plus. Equipped with new NAND technology, it achieves sequential read/write speeds of up to 7,250/6,300MB/s (45% faster than its predecessor). Energy efficiency is increased by 73% thanks to the nickel-plated controller, resulting in more MB/s per watt while maintaining performance and thermal control. The product offers superior flexibility with expandable capacities up to 4TB and faster write speeds thanks to Intelligent TurboWrite 2.0 technology and a new expanded TurboWrite area.

The Samsung 990 EVO Plus saves up to 73% energy during operation.

With its diverse range of Flash memory products, especially its superior internal hard drives, Samsung is continuing to solidify its decades-long reign as the leading brand. It's a trusted name for users seeking high-performance, durable hard drives with multi-device compatibility.